TY - JOUR
T1 - Optoelectronic behaviour of zinc phthalocyanines doped with anthraquinone derivatives and their potential use in flexible devices
AU - Sánchez-Vergara, María Elena
AU - Gómez-Gómez, Mariana
AU - Hamui, Leon
AU - Álvarez-Bada, Jose Ramón
AU - Jiménez-Sandoval, Omar
N1 - Publisher Copyright:
© 2020 Informa UK Limited, trading as Taylor & Francis Group.
PY - 2021/1/1
Y1 - 2021/1/1
N2 - Zinc phthalocyanine (ZnPc) was doped with 1,4-diaminoanthraquinone, anthraflavic acid and 2-ethylanthraquinone. The organic semiconductors obtained were used in the manufacture of thin films, which were characterized. Films were used to prepare (PET/ITO/doped ZnPc/Ag) flexible devices, whose electric conductivity was evaluated as a function of temperature; some of the devices show a considerable increase in their activity up to values of around 2 × 10−11 S/cm to 10 × 10−11 S/cm and 3 × 10−11 S/cm to 8 × 10−11 S/cm for 0.5 and 1.0 V, respectively. Absorbance, Q-band, B-band and optical activation energy were also evaluated by ultraviolet-visible spectroscopy. Optical bandgap Egopt values calculated for the semiconductors have a value of around 1.35 eV. The semiconductor devices were annealed in accelerated time and temperature conditions and their optical activation energy was later re-evaluated. The films exhibit two transitions; the first transition corresponds to the optical bandgap, Egopt, and the second one to the fundamental gap, Eg.
AB - Zinc phthalocyanine (ZnPc) was doped with 1,4-diaminoanthraquinone, anthraflavic acid and 2-ethylanthraquinone. The organic semiconductors obtained were used in the manufacture of thin films, which were characterized. Films were used to prepare (PET/ITO/doped ZnPc/Ag) flexible devices, whose electric conductivity was evaluated as a function of temperature; some of the devices show a considerable increase in their activity up to values of around 2 × 10−11 S/cm to 10 × 10−11 S/cm and 3 × 10−11 S/cm to 8 × 10−11 S/cm for 0.5 and 1.0 V, respectively. Absorbance, Q-band, B-band and optical activation energy were also evaluated by ultraviolet-visible spectroscopy. Optical bandgap Egopt values calculated for the semiconductors have a value of around 1.35 eV. The semiconductor devices were annealed in accelerated time and temperature conditions and their optical activation energy was later re-evaluated. The films exhibit two transitions; the first transition corresponds to the optical bandgap, Egopt, and the second one to the fundamental gap, Eg.
KW - annealing
KW - Doped semiconductor
KW - electrical properties
KW - flexible device
KW - optical properties
UR - http://www.scopus.com/inward/record.url?scp=85083562672&partnerID=8YFLogxK
U2 - 10.1080/10667857.2020.1747807
DO - 10.1080/10667857.2020.1747807
M3 - Artículo
AN - SCOPUS:85083562672
SN - 1066-7857
VL - 36
SP - 250
EP - 259
JO - Materials Technology
JF - Materials Technology
IS - 4
ER -