Optical and electrical properties of TTF-MPcs (M = Cu, Zn) interfaces for optoelectronic applications

  • María Elena Sánchez-Vergara*
  • , Mariel Leyva-Esqueda
  • , José Ramón Alvárez-Bada
  • , Verónica García-Montalvo
  • , Iván Darío Rojas-Montoya
  • , Omar Jiménez-Sandoval
  • *Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

17 Citas (Scopus)

Resumen

Sandwich structures were fabricated by a vacuum deposition method using MPc (M = Cu, Zn), with a Tetrathiafulvalene (TTF) derivative, and Indium Tin Oxide (ITO) and aluminum electrodes. The structure and morphology of the deposited films were studied by IR spectroscopy, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The absorption spectra of TTF derivative-MPc (M = Cu, Zn) thin films deposited at room temperature were recorded in the spectral range 200-1000 nm. The optical band gap of the thin films was determined from the (αhν)1/2 vs. hν plot. The direct-current (DC) electrical properties of the glass/ITO/TTFderiv-MPc (M = Cu, Zn)/Al structures were also investigated. Changes in conductivity of the derivative-TTF-enriched Pc compounds suggest the formation of alternative paths for carrier conduction. At low voltages, forward current density obeys an ohmic I-V relationship; at higher voltages, conduction is mostly due to a space-charge-limited conduction (SCLC) mechanism.

Idioma originalInglés
Páginas (desde-hasta)21037-21049
Número de páginas13
PublicaciónMolecules
Volumen20
N.º12
DOI
EstadoPublicada - 25 nov 2015

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