Phase stability of MoTe₂ obtained by tellurization of sputtered molybdenum oxide: The influence of the thickness and the precursor crystallinity

Keyphrases

• Annealing 100%
• Crystallinity 100%
• Tellurization 100%
• MoTe2 100%
• Phase Stability 100%
• Molybdenum Oxide 100%
• Misoriented 66%
• Oriented Crystal 66%
• Crystalline Silicon Wafer 33%
• High Thickness 33%
• Crystalline Modification 33%
• Silicon Substrate 33%
• MoOx 33%
• X-ray Diffraction Measurement 33%
• Crystalline State 33%
• One Sample 33%
• Fused Silica 33%
• Grazing Incidence 33%
• Precursor Film 33%
• MoSe2 33%
• Fault-tolerant 33%
• 1T Phase 33%
• Fused Silica Substrate 33%
• CRISTAL 33%
• 2H Phase 33%
• Topological Quantum Computation 33%
• Topological Superconductivity 33%

Chemistry

• Silicon 100%
• Crystallinity 100%
• Molybdenum Oxide 100%
• Silicon Dioxide 100%
• Phase Stability 100%
• X-Ray Diffraction 50%
• Superconductivity 50%

Material Science

• Film 100%
• Molybdenum Oxide 100%
• Thin Films 66%
• Silicon Dioxide 66%
• Silicon Substrate 66%
• X-Ray Diffraction 33%
• Diffraction Measurement 33%
• Superconductivity 33%