TY - GEN
T1 - Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures
AU - Hamui, L.
AU - Monroy, B. M.
AU - Roca I Cabarrocas, P.
AU - Santana, G.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.
AB - This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.
KW - Photovoltaic structures
KW - polymorphous silicon
KW - raman
KW - spectroscopic ellipsometry
KW - thin films
UR - https://www.scopus.com/pages/publications/84912140759
U2 - 10.1109/PVSC.2014.6925026
DO - 10.1109/PVSC.2014.6925026
M3 - Contribución a la conferencia
AN - SCOPUS:84912140759
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 737
EP - 741
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -