Synthesis and characterization of NiPcTSTNa(L) thin films

M. E. Sánchez-Vergara; V. García-Montalvo; J. Santoyo-Salazar; R. J. Fragoso-Soriano; O. Jiménez-Sandoval

doi:10.1007/s12034-012-0356-9

Synthesis and characterization of NiPcTSTNa(L) thin films

M. E. Sánchez-Vergara^*
, V. García-Montalvo
, J. Santoyo-Salazar
, R. J. Fragoso-Soriano
, O. Jiménez-Sandoval

^*Autore corrispondente per questo lavoro

Universidad Nacional Autónoma de México
Centro de Investigacion y de Estudios Avanzados del Instituto Politécnico Nacional
Instituto Politécnico Nacional

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2 Citazioni (Scopus)

Abstract

NiPcTSTNa(L) [L=ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (αhv)^1/2 vs hv plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3·3 and 3·7 eV.

Lingua originale	English
pagine (da-a)	759-766
Numero di pagine	8
Rivista	Bulletin of Materials Science
Volume	35
Numero di pubblicazione	5
DOI	https://doi.org/10.1007/s12034-012-0356-9
Stato di pubblicazione	Published - 1 ott 2012

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10.1007/s12034-012-0356-9

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https://www.scopus.com/pages/publications/84868223100

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abstract = "NiPcTSTNa(L) [L=ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (αhv)1/2 vs hv plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3·3 and 3·7 eV.",

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TY - JOUR

T1 - Synthesis and characterization of NiPcTSTNa(L) thin films

AU - Sánchez-Vergara, M. E.

AU - García-Montalvo, V.

AU - Santoyo-Salazar, J.

AU - Fragoso-Soriano, R. J.

AU - Jiménez-Sandoval, O.

PY - 2012/10/1

Y1 - 2012/10/1

N2 - NiPcTSTNa(L) [L=ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (αhv)1/2 vs hv plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3·3 and 3·7 eV.

AB - NiPcTSTNa(L) [L=ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (αhv)1/2 vs hv plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3·3 and 3·7 eV.

KW - Electrical conductivity

KW - Optical absorption

KW - Semiconductors

KW - Thin films

UR - https://www.scopus.com/pages/publications/84868223100

U2 - 10.1007/s12034-012-0356-9

DO - 10.1007/s12034-012-0356-9

M3 - Artículo

AN - SCOPUS:84868223100

SN - 0250-4707

VL - 35

SP - 759

EP - 766

JO - Bulletin of Materials Science

JF - Bulletin of Materials Science

IS - 5

ER -

Synthesis and characterization of NiPcTSTNa(L) thin films

Abstract

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