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Preparation of Hybrid Films Based in Aluminum 8-Hydroxyquinoline as Organic Semiconductor for Photoconductor Applications

  • María Elena Sánchez Vergara(corresponding author)
    ,
  • Luis Alberto Cantera Cantera
    ,
  • Citlalli Rios
    ,
  • Roberto Salcedo
    ,
  • Octavio Lozada Flores
    ,
  • Ateet Dutt
*Corresponding author for this work
Research Output:
Contribution to journal
Article
Peer-review

Open access

Publication Information

Output type

Research Output:
Contribution to journal
Article
Peer-review

Original language

English

Article number

7708

Journal (Volume, Issue Number)

Sensors (Switzerland) (Volume 23, Issue 18)

Publication milestones

  • Published - 01/09/2023

Publication status

Published - 01/09/2023

ISSN

1424-8220

Publication IDs

  • Scopus: 85172730944

Abstract

In the present work, we have investigated an organic semiconductor based on tris(8-hydroxyquinoline) aluminum (AlQ3) doped with tetracyanoquinodimethane (TCNQ), which can be used as an organic photoconductor. DFT calculations were carried out to optimize the structure of semiconductor species and to obtain related constants in order to compare experimental and theoretical results. Subsequently, AlQ3-TCNQ films with polypyrrole (Ppy) matrix were fabricated, and they were morphologically and mechanically characterized by Scanning Electron Microscopy, X-ray diffraction and Atomic Force Microscopy techniques. The maximum stress for the film is 8.66 MPa, and the Knoop hardness is 0.0311. The optical behavior of the film was also analyzed, and the optical properties were found to exhibit two indirect transitions at 2.58 and 3.06 eV. Additionally, photoluminescence measurements were carried out and the film showed an intense visible emission in the visible region. Finally, a photoconductor was fabricated and electrically characterized. Applying a cubic spline approximation to fit cubic polynomials to the J-V curves, the ohmic to SCLC transition voltage (Formula presented.) and the trap-filled-limit voltage (Formula presented.) for the device were obtained. Then, the free carrier density and trap density for the device were approximated to (Formula presented.) and (Formula presented.), respectively.

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