Synthesis and characterization of NiPcTSTNa(L) thin films
- ,
- V. García-Montalvoc(Author),
- J. Santoyo-Salazare(Author),
- R. J. Fragoso-Sorianoe(Author),
- O. Jiménez-Sandovald(Author)
- ,
- ,
- cUniversidad Nacional Autónoma de México,
- dInstituto Politécnico Nacional,
- eCentro de Investigacion y de Estudios Avanzados del Instituto Politécnico Nacional
Research Output: Contribution to journal Article Peer-review
Publication Information
Output type
Research Output: Contribution to journal Article Peer-review
Original language
EnglishPages from-to (Number of pages)
Pages 759-766 (8 pages)Journal (Volume, Issue Number)
Bulletin of Materials Science (Volume 35, Issue 5)Publication milestones
- Published - 01/10/2012
Publication status
Published - 01/10/2012
ISSN
0250-4707External Publication IDs
- Scopus: 84868223100
Abstract
NiPcTSTNa(L) [L=ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (αhv)1/2 vs hv plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3·3 and 3·7 eV.
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