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Indanone-Based Copper(II) Molecular Materials as Potential Semiconductors for Optoelectronic Devices

  • María Elena Sánchez Vergara(corresponding author)
    ,
  • César R. Monzón-González
    ,
  • Mariana Gómez Gómez
    ,
  • Roberto Salcedo
    ,
  • Ricardo Corona-Sánchez
    ,
  • Rubén A. Toscano
*Corresponding author for this work
  • ,
  • Universidad Nacional Autónoma de México
    ,
  • Upper Austria University of Applied Sciences
    ,
  • Universidad Anáhuac
    ,
  • Universidad Autónoma Metropolitana
Research Output:
Contribución a una revista
Artículo
Revisión por expertos

Publication Information

Tipo de resultado

Research Output:
Contribución a una revista
Artículo
Revisión por expertos

Idioma original

Inglés

Número de artículo

e202200125

Revista (Volumen, Número de Edición)

European Journal of Inorganic Chemistry (Volumen 2022, Número 16)

Hitos de publicación

  • Publicada - 08/06/2022

Estado de publicación

Publicada - 08/06/2022

ISSN

1434-1948

Publication IDs

  • Scopus: 85130198071

Abstract

A series of copper(II) molecular materials derived from 2-benzylidene-1-indanones were synthesized in order to investigate the influence of their structure on their optical and semiconductor behavior. The molecular materials were structurally characterized by IR spectroscopy, mass spectrometry, and X-ray diffraction. Additionally, thin films of copper complexes were successfully deposited by thermal evaporation, and the optical and electrical features of films were examined using UV-vis spectroscopy and current-voltage measurements, respectively. Subsequently, the structures of copper(II) complexes were optimized by density functional theory (DFT), and the energy values of the single occupied molecular orbital (SOMO) and lowest unoccupied molecular orbital (LUMO) were calculated. According the DFT calculations, the copper complexes show fluxional isomerism. Theoretical bandgap values were found to be consistent with those experimentally obtained and showed to be closely related with the p-semiconductor behavior of copper complexes, which at the same time depends on the substituents in the structure.