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Optoelectronic Properties Improvement of pm-Si:H Films with Silane Flux Variation

Research Output: Capítulo del libro/informe/acta de congreso Contribución a la conferencia Revisión por expertos

Publication Information

Tipo de resultado

Research Output: Capítulo del libro/informe/acta de congreso Contribución a la conferencia Revisión por expertos

Idioma original

Inglés

Número de artículo

8547895

Páginas desde-hasta (Número de páginas)

Páginas 2010-2012 (3 páginas)

Hitos de publicación

  • Publicada - 26/11/2018

Estado de publicación

Publicada - 26/11/2018

Editorial

Institute of Electrical and Electronics Engineers Inc.

Serie de publicación

  • Nombre de serie de publicación: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

ISBN (electrónico)

9781538685297

Publication IDs

  • Scopus: 85059882913

Título de publicación principal

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Abstract

this work describes the effect of silane flux on pm-Si:H films deposited by pecvd, with 3.5 torr, 210 °C and silane flux between 16-40 sccm. The augment of the silane flux increase the deposition rate to 2.3 A/s. The crystalline fraction varies from 9% to 17%. Exodiffusion experiments were related to structural and optical properties to understand their growth by analysis of bonding environment. The hydrogen stability and its amount bonded in these films are enhanced as the flux decreases. The optical gap decrease from 1.76 to 1.7 eV with silane flux. These could improve the stability of photovoltaic devices.

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