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Chemical bath deposition of CdS thin films doped with Zn and Cu

*Corresponding author for this work
  • Centro de Investigacion y de Estudios Avanzados del Instituto Politécnico Nacional
Prodotto della ricerca:
Contribution to journal
Article
Peer review

Publication Information

Tipo di output

Prodotto della ricerca:
Contribution to journal
Article
Peer review

Lingua originale

English

Pagine da-a (Numero di pagine)

Pagine 247-255 (9 pagine)

Rivista (volume, numero edizione)

Bulletin of Materials Science (Volume 37, Edizione 2)

Attività cardine della pubblicazione

  • Published - 01/01/2014

Stato pubblicazione

Published - 01/01/2014

ISSN

0250-4707

Publication IDs

  • Scopus: 84899949240

Abstract

Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped CdS films.