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Optoelectronic Properties Improvement of pm-Si:H Films with Silane Flux Variation

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer review

Publication Information

Tipo di output

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer review

Lingua originale

English

Numero dell’articolo

8547895

Pagine da-a (Numero di pagine)

Pagine 2010-2012 (3 pagine)

Attività cardine della pubblicazione

  • Published - 26/11/2018

Stato pubblicazione

Published - 26/11/2018

Editore/-rice

Institute of Electrical and Electronics Engineers Inc.

Serie di pubblicazioni

  • Nome della serie di pubblicazioni: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

ISBN (elettronico)

9781538685297

Publication IDs

  • Scopus: 85059882913

Titolo pubblicazione host

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Abstract

this work describes the effect of silane flux on pm-Si:H films deposited by pecvd, with 3.5 torr, 210 °C and silane flux between 16-40 sccm. The augment of the silane flux increase the deposition rate to 2.3 A/s. The crystalline fraction varies from 9% to 17%. Exodiffusion experiments were related to structural and optical properties to understand their growth by analysis of bonding environment. The hydrogen stability and its amount bonded in these films are enhanced as the flux decreases. The optical gap decrease from 1.76 to 1.7 eV with silane flux. These could improve the stability of photovoltaic devices.

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